N-channel MOSFET transistor 200V 35A

N-channel MOSFET transistor with 200V drain-source voltage rating and 35A continuous current capability. Designed for switching and power management applications in electronics, motor drives, and power supplies, the device offers low on-resistance and fast switching to improve efficiency and thermal performance in compact circuits. The transistor is suitable for use in discrete power stages where a high-voltage N-channel MOSFET is required for reliable switching and energy transfer.

Advantages

The MOSFET delivers a combination of high voltage tolerance and substantial continuous current handling, enabling use in medium- to high-voltage designs. Low on-resistance reduces conduction losses and heat generation under load, while fast switching characteristics minimize switching losses in PWM and high-frequency applications. Its compact footprint allows integration into space-constrained boards and power modules.

Suitable for

• Motor drive and speed control circuits
• Switched-mode power supplies (SMPS) and DC–DC converters
• Power management and battery protection circuits
• Electronic switching and load drivers
• High-voltage class-D amplifiers and inverters

Key specifications

• Device type: N-channel enhancement MOSFET
• Drain-source voltage rating: 200 V
• Continuous drain current: 35 A (thermal and mounting dependent)
• Low on-resistance for reduced conduction losses
• Fast switching speed suitable for PWM and high-frequency operation
• Compact package suitable for PCB mounting and power modules

How to use

Integrate the MOSFET into the circuit following standard power-layout practices: place the device close to the load and use short, wide traces for drain and source connections to minimize parasitic inductance and resistance. Provide an appropriate gate driver that can fully charge and discharge the gate at the intended switching frequency; observe maximum gate-source voltage limits. Ensure adequate cooling through copper area, heat-sinking, or airflow as required by application power dissipation. Include proper flyback diodes, snubbers, or RC networks where inductive loads are present.

Usage recommendations

For reliable operation, verify thermal limits under expected load and ambient conditions, use gate resistors to control switching transitions if necessary, and follow recommended PCB layout guidelines to reduce EMI and improve thermal performance.