N‑MOSFET transistor EB1380279353 50V 0.3A

N‑channel MOSFET transistor EB1380279353 rated for 50 V maximum drain‑source voltage and 0.3 A continuous drain current. The device is intended for switching and low‑power amplification tasks in electronic circuits. Its small size and standard pinout make it suitable for repairs, hobby electronics, interface driving and prototype board applications where compact low‑voltage switching is required.

Advantages

The N‑MOSFET provides low‑voltage gate control and a compact footprint that eases board‑level integration. With a 50 V drain‑source rating and modest drain current capability, it balances voltage tolerance and low‑power dissipation for small signal switching. The device is compatible with common logic‑level gate drive voltages, enabling simple interfacing with microcontrollers and driver stages. Its construction supports reliable switching in low‑current circuits and straightforward replacement in repair scenarios.

Suitable for

• Small signal switching in battery‑powered devices
• Interface drivers for microcontrollers and logic circuits
• Prototype boards and breadboard experiments
• Board‑level repairs and component replacements
• Low‑power analog amplification and signal conditioning

Key specifications

• N‑channel MOSFET topology
• Maximum drain‑source voltage: 50 V
• Maximum continuous drain current: 0.3 A
• Suitable for low‑power switching and amplification
• Compact package suitable for through‑hole or surface‑mount boards depending on variant

How to use

Connect the transistor according to standard N‑channel MOSFET conventions: drain to the load or supply, source to reference ground, and gate to the control signal through an appropriate gate resistor if required. Observe proper gate voltage limits to avoid exceeding the device ratings; use a pull‑down resistor on the gate to ensure defined off‑state when the drive signal is disconnected. Provide adequate thermal management for continuous operation near the current rating and verify correct orientation before soldering or mounting on a prototype board.

Usage recommendations

For reliable performance, drive the gate within the recommended logic‑level range and include a series gate resistor (typically 100 Ω–1 kΩ) for switching applications to limit transient currents. Add a flyback diode when switching inductive loads, and keep operating current below the maximum continuous rating to reduce heating. Verify the package variant and pinout before replacement to ensure mechanical and electrical compatibility.